The Fitting Parameters Extraction of Conversion Model of the Low Dose Rate Effect in Bipolar Devices

Abstract

The Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar devices consists of in base current degradation of NPN and PNP transistors increase as the dose rate is decreased [1]. As a result of almost 20-year studying, the some physical models of effect are developed, being described in [2] in detail. Accelerated test methods, based on these models use in standards [3, 4]. In [5] the conversion model of the effect, that allows to describe the inverse S-shaped excess base current dependence versus dose rate, was proposed. This paper presents the problem of conversion model’s fitting parameters extraction.