DSpace Repository
Down-Shifter luminescent features engineering in amorphous silicon by femtosecond laser
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | FORSH, Pavel | |
| dc.contributor.author | EMELYANOV, Andrey | |
| dc.contributor.author | KAZANSKII, Andrey | |
| dc.contributor.author | KHENKIN, Mark | |
| dc.contributor.author | ZABOTNOV, Stanislav | |
| dc.contributor.author | KASHKAROV, Pavel | |
| dc.contributor.author | GECEVICIUS, Mindaugas | |
| dc.contributor.author | BERESNA, Martynas | |
| dc.contributor.author | KAZANSKY, Peter | |
| dc.date.accessioned | 2019-10-25T15:27:16Z | |
| dc.date.available | 2019-10-25T15:27:16Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | FORSH, Pavel, EMELYANOV, Andrey, KAZANSKII, Andrey, KHENKIN, Mark, ZABOTNOV, Stanislav, KASHKAROV, Pavel, GECEVICIUS, Mindaugas, BERESNA, Martynas, KAZANSKY, Peter. Down-Shifter luminescent features engineering in amorphous silicon by femtosecond laser. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 294-297. ISBN 978-9975-62-343-8. | en_US |
| dc.identifier.isbn | 978-9975-62-343-8 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/5340 | |
| dc.description.abstract | In the present work we report investigations of structural and photoluminescence properties of hydrogenated amorphous silicon (a-Si:H) films irradiated by femtosecond laser pulses. We observed that femtosecond laser irradiation provided non-uniform a-Si:H structure modification. Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystals produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Tehnica UTM | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | amorphous silicon | en_US |
| dc.subject | defect photoluminescence | en_US |
| dc.subject | femtosecond laser processing | en_US |
| dc.title | Down-Shifter luminescent features engineering in amorphous silicon by femtosecond laser | en_US |
| dc.type | Article | en_US |
Files in this item
The following license files are associated with this item:
This item appears in the following Collection(s)
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States