Shubnikov de Haas oscillations in bi wires doped with acceptor impurities

Abstract

Shubnikov de Haas (ShdH) oscillations in single-crystal wires of Bi doped with acceptor impurities of Sn up to 0.3at% with diameters of 100 nm to 5 μm were investigated. The wires obtained by the liquid phase casting were single-crystals of the cylindrical form in glass insulation with the standard (1011) orientation along the wire axis. All investigated samples exhibited ShdH oscillations of charge carriers in Land T points of the Brillouin zone in temperature range 2.1 < Т < 4.2 К. The period of oscillations is independent of diameter. It is shown, that with an increase in the degree of doping Bi with an acceptor impurity, the Fermi surface of T - holes increases by more than an order of magnitude; L – holes, by 3 times. The cyclotron mass, Dingle temperature and the position of the Fermi level εF of T holes during doping were calculated. The results were compared with similar data obtained on bulk samples.