Topological interface states and effects for next generation of innovative devices

Abstract

Topological insulators (TI) have opened a gateway to search new quantum electronic phase of the condensed matter as well as to pave new platform of modern technology. This stems mainly on their unique surface states that are protected by time-reversal symmetry, show the Dirac cones connecting the inverted conduction and valence bands and exhibit unique spin-momentum locking property. Increasing the surface state contribution in proportion to the bulk of material is critical to investigate the surface states and for future innovative device applications. The way to achieve this is to configure topological insulators into nanostructures, which at the same time in combination with others materials significantly enlarge the variety of new states and phenomena. This article reviews the recent progress made in topological insulator nanoheterostructures electronic states investigation. The state of art of different new scenario of engineering topologicaly interface states in the TI heterostructures are revealed, in particular by using polarization fields and antiferromagnetic ordering. Some of new proposals for innovative electronic devices are discussed.