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Topological interface states and effects for next generation of innovative devices

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dc.contributor.author KANTSER, Valeriu
dc.contributor.author CĂRLIG, Sergiu
dc.date.accessioned 2019-10-26T09:20:03Z
dc.date.available 2019-10-26T09:20:03Z
dc.date.issued 2013
dc.identifier.citation KANTSER, Valeriu, CĂRLIG, Sergiu. Topological interface states and effects for next generation of innovative devices. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 33-38. ISBN 978-9975-62-343-8. en_US
dc.identifier.isbn 978-9975-62-343-8
dc.identifier.uri http://repository.utm.md/handle/5014/5367
dc.description.abstract Topological insulators (TI) have opened a gateway to search new quantum electronic phase of the condensed matter as well as to pave new platform of modern technology. This stems mainly on their unique surface states that are protected by time-reversal symmetry, show the Dirac cones connecting the inverted conduction and valence bands and exhibit unique spin-momentum locking property. Increasing the surface state contribution in proportion to the bulk of material is critical to investigate the surface states and for future innovative device applications. The way to achieve this is to configure topological insulators into nanostructures, which at the same time in combination with others materials significantly enlarge the variety of new states and phenomena. This article reviews the recent progress made in topological insulator nanoheterostructures electronic states investigation. The state of art of different new scenario of engineering topologicaly interface states in the TI heterostructures are revealed, in particular by using polarization fields and antiferromagnetic ordering. Some of new proposals for innovative electronic devices are discussed. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject topological insulator en_US
dc.subject heterostructures en_US
dc.subject nanowire en_US
dc.subject nanotube en_US
dc.subject supersymmetric potential en_US
dc.subject polarization fields en_US
dc.subject antiferromagnetic ordering en_US
dc.subject low dimensional thermoelectricity en_US
dc.title Topological interface states and effects for next generation of innovative devices en_US
dc.type Article en_US


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