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Angle dependence of the magnetoresistance in bi nanowires

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dc.contributor.author KONOPKO, Leonid
dc.contributor.author NIKOLAEVA, Albina
dc.contributor.author HUBER, Tito
dc.contributor.author ROGACKI, Krzysztof
dc.date.accessioned 2019-10-31T12:39:37Z
dc.date.available 2019-10-31T12:39:37Z
dc.date.issued 2019
dc.identifier.citation KONOPKO, Leonid, NIKOLAEVA, Albina, HUBER, Tito, ROGACKI, Krzysztof. Angle dependence of the magnetoresistance in bi nanowires. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p.64. ISBN 978-9975-108-84-3. en_US
dc.identifier.isbn 978-9975-108-84-3
dc.identifier.uri http://repository.utm.md/handle/5014/5779
dc.description Abstract en_US
dc.description.abstract Bulk bismuth has been classified as a trivial topological insulator (TI) where the surface states do not have topological protection. Still, the electronic mobility of surface states is exceptionally large. This is not surprising if we consider that bulk Bi can be assembled by stacking bilayers, and that the bilayer of Bi is thought to represent a two dimensional TI that supports edge modes propagating along the perimeter of the sample, modes that exhibit coherent propagation and suppression of backscattering. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject topological insulator en_US
dc.subject Bi bilayers en_US
dc.subject quantum size effect en_US
dc.title Angle dependence of the magnetoresistance in bi nanowires en_US
dc.type Article en_US


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  • 2019
    Extended Abstracts of the: The 10th IC|ECCO; October 23-26, 2019

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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