Measuring approach for semiconductor nanostructured gas sensors parameters

Abstract

The development of new technologies for extracting and testing the parameters of nanostructures based on semiconductor oxides required the development of special instruments for measuring the parameters of such structures [1], in particular, measuring the temperature dependences of their electrical resistances. The small size of the nanostructures determines the restrictions imposed on the permissible values of currents, voltages, and powers that can be applied to such nanostructures.