Abstract:
Formaldehyde (СH2О) of 40% is widely used in medicine as a substance applied in processes for sterilization of bone grafts for further use as implants. The efficiency of sterilization depends on the amount of СH2О remaining in the graft pores [1]. Thus, the purpose of washing grafts with СH2О being the lack of СH2О at the end of the sterilization process. The purpose of the investigations is to establish the changes / response of the resistivity of ZnO-type semiconductor oxide films to the action of СH2О vapors, preventively subjected to rapid thermal treatment regimes.