Determination of the charge carrier system parameters in Pb0.82Sn0.18Te

dc.contributor.author	MEGLEI, D.
dc.contributor.author	ALEKSEEVA, S.
dc.date.accessioned	2019-11-01T10:55:35Z
dc.date.available	2019-11-01T10:55:35Z
dc.date.issued	2019
dc.identifier.citation	MEGLEI, D., ALEKSEEVA, S. Determination of the charge carrier system parameters in Pb0.82Sn0.18Te. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p. 102. ISBN 978-9975-108-84-3.	en_US
dc.identifier.isbn	978-9975-108-84-3
dc.identifier.uri	http://repository.utm.md/handle/5014/5834
dc.description	Abstract
dc.description.abstract	The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), and Nernst-Ettingshausen coefficient (Q) for five Pb0.82Sn0.18Te samples with different charge carrier concentrations in a temperature range of 100-300 K have been studied.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electrical conductivity	en_US
dc.subject	Hall effect	en_US
dc.subject	Nernst–Ettingshausen effect	en_US
dc.subject	Seebeck effect	en_US
dc.title	Determination of the charge carrier system parameters in Pb0.82Sn0.18Te	en_US
dc.type	Article	en_US