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Determination of the charge carrier system parameters in Pb0.82Sn0.18Te

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dc.contributor.author MEGLEI, D.
dc.contributor.author ALEKSEEVA, S.
dc.date.accessioned 2019-11-01T10:55:35Z
dc.date.available 2019-11-01T10:55:35Z
dc.date.issued 2019
dc.identifier.citation MEGLEI, D., ALEKSEEVA, S. Determination of the charge carrier system parameters in Pb0.82Sn0.18Te. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p. 102. ISBN 978-9975-108-84-3. en_US
dc.identifier.isbn 978-9975-108-84-3
dc.identifier.uri http://repository.utm.md/handle/5014/5834
dc.description Abstract
dc.description.abstract The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), and Nernst-Ettingshausen coefficient (Q) for five Pb0.82Sn0.18Te samples with different charge carrier concentrations in a temperature range of 100-300 K have been studied. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject electrical conductivity en_US
dc.subject Hall effect en_US
dc.subject Nernst–Ettingshausen effect en_US
dc.subject Seebeck effect en_US
dc.title Determination of the charge carrier system parameters in Pb0.82Sn0.18Te en_US
dc.type Article en_US


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  • 2019
    Extended Abstracts of the: The 10th IC|ECCO; October 23-26, 2019

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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