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Effect of indium and tin ion implantations on the properties of Ge2Sb2Te5 thin films

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dc.contributor.author LAZARENKO, P.
dc.contributor.author SITNIKOV, A.
dc.contributor.author KOZYUKHIN, S.
dc.contributor.author SELEZNEV, D.
dc.contributor.author KOZLOV, A.
dc.contributor.author YAKUBOV, A.
dc.contributor.author SHERCHENKOV, A.
dc.contributor.author VOROBYOV, YU.
dc.contributor.author BOYTSOVA, O.
dc.contributor.author KIRILENKO, E.
dc.contributor.author KULEVOY, T.
dc.date.accessioned 2019-11-02T09:09:02Z
dc.date.available 2019-11-02T09:09:02Z
dc.date.issued 2019
dc.identifier.citation LAZARENKO, P., SITNIKOV, A., KOZYUKHIN, S. et al. Effect of indium and tin ion implantations on the properties of Ge2Sb2Te5 thin films. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 21-22. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/5879
dc.description Abstract en_US
dc.description.abstract One of the most perspective electrical and optical non-volatile memory type is phase change memory (PCM) based on the chalcogenide materials, particularly on GST225 [1]. Introduction of dopants is an effective method for purposeful change of the GST225 properties, 22 Regular Papers – Oral Session which can be used for optimization of the characteristics of the material for PCM application. In this work, we investigated the influence of In and Sn dopants introduced by implantation on the properties of GST225 thin films. The ion implantations were carried out on Multipurpose Test Bench (MTB) at NRC "Kurchatov Institute"-ITEP. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject implantations en_US
dc.subject non-volatile memory en_US
dc.subject GST 225 en_US
dc.title Effect of indium and tin ion implantations on the properties of Ge2Sb2Te5 thin films en_US
dc.type Article en_US


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