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Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS

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dc.contributor.author NISTREANU, A.
dc.date.accessioned 2019-11-02T10:48:11Z
dc.date.available 2019-11-02T10:48:11Z
dc.date.issued 2019
dc.identifier.citation NISTREANU, A. Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 26-27. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/5891
dc.description Abstract en_US
dc.description.abstract Molybdenum disulfide (MoS2) is widely used in optoelectronic devices due to its properties like high mobility, effective luminescence and strong binding energy. When 2D TMDs are reduced to 0D (zero dimensional) then we have a single MoS2 quantum dot (QD), and an entirely special electronic property arises due to its quantum confinement effect which exhibits a larger direct band gap (3.96 eV) when compared to monolayer 2D sheets (1.89 eV)[1]. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject molybdenum disulfide en_US
dc.subject optoelectronic devices en_US
dc.subject Raman scattering en_US
dc.title Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS en_US
dc.type Article en_US


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