Interaction of chalcogenide glass/Ag dual films structures with e-beam and evaluation of the occurring effects on the performance of CBRAM devices

Abstract

Among the many applications of chalcogenide glasses, their involvement as an active layer in redox-conductive-bridge-memory (CBRAM) devices triggers particular interest because of their potential to replace CMOS-based NAND and flash memory. In these devices the chalcogenide glass film is in contact with a silver film, and it is of a practical interest to understand how different external events, for example irradiation with an beam of electrons can influence this dual layer structure in order to identify how the performance of the CBRAM devices will be affected.