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Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures

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dc.contributor.author KOVALUYK, V.
dc.contributor.author LAZARENKO, P.
dc.contributor.author KOZYUKHIN, S.
dc.contributor.author AN, P.
dc.contributor.author PROKHODTSOV, A.
dc.contributor.author GOLTSMAN, G.
dc.contributor.author SHERCHENKOV, A.
dc.date.accessioned 2019-11-04T11:32:13Z
dc.date.available 2019-11-04T11:32:13Z
dc.date.issued 2019
dc.identifier.citation KOVALUYK, V., LAZARENKO, P., KOZYUKHIN, S., AN, P., PROKHODTSOV, A., GOLTSMAN, G., SHERCHENKOV, A. Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 47-48. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/5991
dc.description Abstract en_US
dc.description.abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of ears open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject Ge-Sb-Te thin films en_US
dc.subject amorphous and crystalline states en_US
dc.subject optical waveguide structures en_US
dc.title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures en_US
dc.type Article en_US


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