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Light- and voltage-controlled capacity of Cu-As2S3-Cu thin film cells for photodetection

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dc.contributor.author GANEA, P.
dc.contributor.author LORINCZI, A.
dc.contributor.author SOCOL, G.
dc.contributor.author ZAMFIRA, S.
dc.contributor.author MATEI, E.
dc.contributor.author CREȚU, N.
dc.contributor.author POPESCU, M.
dc.contributor.author SAVA, F.
dc.date.accessioned 2019-11-04T14:45:37Z
dc.date.available 2019-11-04T14:45:37Z
dc.date.issued 2019
dc.identifier.citation GANEA, P., LORINCZI, A., SOCOL, G., ZAMFIRA, S., MATEI, E., CREȚU, N., POPESCU, M., SAVA, F. Light- and voltage-controlled capacity of Cu-As2S3-Cu thin film cells for photodetection. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 58-60. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/6024
dc.description Abstract en_US
dc.description.abstract Amorphous As2S3 thin films have remarkable electrical and optical properties, which make them solid candidates for a variety of applications and keep up the scientific interest to study them, even after decades from the first results [1]. This composition has its optical absorption edge around the 500 nm, and shows a high optical transmission in the infrared (IR) and mid-infrared (MIR) spectral domain [2]. From structural point of view, a-As2S3 has a quite sparse network, able to accommodate certain ionic or atomic species [2]. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject amorphous As2S3 thin films en_US
dc.subject bi-layer structures en_US
dc.subject phase-change memory (PCM) structures en_US
dc.title Light- and voltage-controlled capacity of Cu-As2S3-Cu thin film cells for photodetection en_US
dc.type Article en_US


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