Si, Ge and SiGe wires for sensor application

DRUZHININ, A. A.; KHOVERKO, Yu. M.; OSTROVSKII, I. P.; NICHKALO, S. I.; NIKOLAEVA, A. A.; KONOPKO, L. A.; STICH, I.

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dc.contributor.author	DRUZHININ, A. A.
dc.contributor.author	KHOVERKO, Yu. M.
dc.contributor.author	OSTROVSKII, I. P.
dc.contributor.author	NICHKALO, S. I.
dc.contributor.author	NIKOLAEVA, A. A.
dc.contributor.author	KONOPKO, L. A.
dc.contributor.author	STICH, I.
dc.date.accessioned	2019-11-06T10:28:03Z
dc.date.available	2019-11-06T10:28:03Z
dc.date.issued	2011
dc.identifier.citation	DRUZHININ, A. A., KHOVERKO, Yu. M., OSTROVSKII, I. P. et al. Si, Ge and SiGe wires for sensor application. In: Microelectronics and Computer Science: proc. of the 7th intern. Conf., September 22-24, 2011. Chişinău, 2011, vol. 1, pp. 59-62. ISBN 978-9975-45-174-1.	en_US
dc.identifier.isbn	978-9975-45-174-1
dc.identifier.uri	http://repository.utm.md/handle/5014/6198
dc.description.abstract	Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 m. Ga- In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	wires	en_US
dc.subject	magnetoresistance	en_US
dc.subject	nanowires	en_US
dc.title	Si, Ge and SiGe wires for sensor application	en_US
dc.type	Article	en_US