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Si, Ge and SiGe wires for sensor application

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dc.contributor.author DRUZHININ, A. A.
dc.contributor.author KHOVERKO, Yu. M.
dc.contributor.author OSTROVSKII, I. P.
dc.contributor.author NICHKALO, S. I.
dc.contributor.author NIKOLAEVA, A. A.
dc.contributor.author KONOPKO, L. A.
dc.contributor.author STICH, I.
dc.date.accessioned 2019-11-06T10:28:03Z
dc.date.available 2019-11-06T10:28:03Z
dc.date.issued 2011
dc.identifier.citation DRUZHININ, A. A., KHOVERKO, Yu. M., OSTROVSKII, I. P. et al. Si, Ge and SiGe wires for sensor application. In: Microelectronics and Computer Science: proc. of the 7th intern. Conf., September 22-24, 2011. Chişinău, 2011, vol. 1, pp. 59-62. ISBN 978-9975-45-174-1. en_US
dc.identifier.isbn 978-9975-45-174-1
dc.identifier.uri http://repository.utm.md/handle/5014/6198
dc.description.abstract Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 m. Ga- In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject wires en_US
dc.subject magnetoresistance en_US
dc.subject nanowires en_US
dc.title Si, Ge and SiGe wires for sensor application en_US
dc.type Article en_US


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