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Electrochemical Nanostructuring of CuInS2 Bulk Crystals

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dc.contributor.author MONAICO, Eduard
dc.contributor.author URSAKI, Veaceslav
dc.contributor.author ZALAMAI, Victor
dc.contributor.author MASNIK, Alisa
dc.contributor.author SYRBU, Nicolae
dc.contributor.author BURLACU, Alexandru
dc.date.accessioned 2019-11-07T08:44:48Z
dc.date.available 2019-11-07T08:44:48Z
dc.date.issued 2011
dc.identifier.citation MONAICO, Eduard, URSAKI, Veaceslav, ZALAMAI, Victor et al. Electrochemical Nanostructuring of CuInS2 Bulk Crystals. In: Microelectronics and Computer Science: proc. of the 7th intern. Conf., September 22-24, 2011. Chişinău, 2011, vol. 1, pp. 139-143. ISBN 978-9975-45-174-1. en_US
dc.identifier.isbn 978-9975-45-174-1
dc.identifier.uri http://repository.utm.md/handle/5014/6309
dc.description.abstract We show that chalcopyrite CuInS2 crystals can be nanostructured by electrochemical treatment in an aqueous HCl solution. In order the crystals to become suitable for electrochemical nanostructuring they are subjected to thermal treatment either in vacuum or in Zn vapors. The morphology of the producedmaterial and the diameter of pores are found to be a function of the resistivity of samples attained after thermal treatment. The pore diameter can vary in the range from 50 nm to 1 m. The influence of thermal treatment and electrochemical etching on the photoluminescence spectra is analyzed. It is shown that nanopatterned surfaces can be produced either by short duration electrochemical etching, or by longer treatment followed by sonication. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject chalcopyrite crystals en_US
dc.subject crystals en_US
dc.subject electrical conductivity en_US
dc.subject electrochemical treatment en_US
dc.subject luminescence en_US
dc.title Electrochemical Nanostructuring of CuInS2 Bulk Crystals en_US
dc.type Article en_US


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