Formation of low-dimensional structures on InP under fast anodic etching

Abstract

In this paper, we report on the possibility of cost-effective fabrication of InP nanomembranes and nanowires using fast anodic etching of n-InP single crystalline substrates under potentiostatic conditions. Fast anodic etching means that 2-мm long nanowires are obtained in just 3 s of anodization, i.e., the rate of etching in depth direction is about 40 μm/min. Uniform electrochemical depositions of Au dots on InP nanowires is demonstrated.