dc.contributor.author | BELENCHUK, A. | |
dc.contributor.author | KANTSER, V. | |
dc.contributor.author | MOSHNYAGA, V. | |
dc.contributor.author | SAPOVAL, O. | |
dc.contributor.author | ZASAVITSKY, E. | |
dc.date.accessioned | 2019-12-04T09:02:18Z | |
dc.date.available | 2019-12-04T09:02:18Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | BELENCHUK, A., KANTSER, V., MOSHNYAGA, V. et al. Heteroepitaxy of La0.7Ca0.3MnO3 on MgO-buffered R-Al2O3 substrates. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 53-56. ISBN 978-9975-45-082-9. | en_US |
dc.identifier.isbn | 978-9975-45-082-9 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/7231 | |
dc.description.abstract | Precisely (100)-oriented La0.67Ca0.33MnO3 films have been grown by aerosol assisted metal-organic chemical vapor deposition technique on a sapphire (R-plane) substrate covered by a MgO(100) buffer layer. The film structure was characterized by techniques of x-ray diffraction and small-angle x-ray scattering. The temperature dependence of the electrical resistivity of the La0.67Ca0.33MnO3 films was shifted toward lower temperatures by ~10 K in comparing with a typical single crystalline films grown on MgO(100) substrates. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | manganite | en_US |
dc.subject | sapphire | en_US |
dc.subject | epitaxy | en_US |
dc.subject | films | en_US |
dc.subject | crystalline films | en_US |
dc.title | Heteroepitaxy of La0.7Ca0.3MnO3 on MgO-buffered R-Al2O3 substrates | en_US |
dc.type | Article | en_US |
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