Abstract:
Recent results regarding technological aspect of preparing high quality GaP nanoparticles for use in light emissive devices are presented in this work. The nanoparticles have been prepared by a colloidal low temperature method using a new precursor as source of gallium atom such as gallium acetylacetonat and temperature treatment in order to improve the quality of nano-suspension and to characterize their dimensions. Trioctilphosphine oxide (TOPO) was used to avoid coagulation and aggregation of nanoparticles. Photoluminescence and. X-ray diffraction and high resolution transmission microscopy (TEM) of the nanoparticles prepared under different conditions are investigated. We demonstrate that by using as a sources of gallium atoms of gallium acetylacetonate (Ga[CH3COOH=C(O-)CH3]3) uniform fraction of nanoparticles of about 8-10 nm in diameter are produces. These materials show a luminescence maximum at around 3.2 eV determined by quantum-confinement effects.
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