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Phonon engineered suppression of lattice thermal conductivity in segmented and cross-section modulated silicon nanowires

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dc.contributor.author NIKA, Denis
dc.date.accessioned 2019-12-04T11:28:33Z
dc.date.available 2019-12-04T11:28:33Z
dc.date.issued 2012
dc.identifier.citation NIKA, Denis. Phonon engineered suppression of lattice thermal conductivity in segmented and cross-section modulated silicon nanowires. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 92-93. ISBN 978-9975-45-082-9. en_US
dc.identifier.isbn 978-9975-45-082-
dc.identifier.uri http://repository.utm.md/handle/5014/7241
dc.description.abstract The strong suppression of lattice (phonon) thermal conductivity in segmented nanowires, consisting of acoustically-mismatched materials, as well as in cross-section modulated Si nanowires is theoretically demonstrated using the Born-von Karman and Face-centered Cubic Cell models of lattice vibrations. This effect is explained by the exclusion of the phonon modes trapped in nanowire segments from the heat flow. As a result 3- to 30-fold drop of the phonon heat flux in the 50 – 400 K temperature range is predicted for segmented or cross-section modulated nanowires under consideration. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanowires en_US
dc.subject phonons en_US
dc.subject lattice thermal conductivity en_US
dc.subject thermal conductivity en_US
dc.title Phonon engineered suppression of lattice thermal conductivity in segmented and cross-section modulated silicon nanowires en_US
dc.type Article en_US


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