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Production and comparative study of ZnO films obtained by magnetron sputtering, MOCVD and electrochemical deposition

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dc.contributor.author RUSU, E.
dc.contributor.author BURLACU, A.
dc.contributor.author ZALAMAI, V.
dc.contributor.author URSAKI, V.
dc.contributor.author PRILEPOV, V.
dc.date.accessioned 2019-12-04T11:50:03Z
dc.date.available 2019-12-04T11:50:03Z
dc.date.issued 2012
dc.identifier.citation RUSU, E., BURLACU, A., ZALAMAI, V. et al. Production and comparative study of ZnO films obtained by magnetron sputtering, MOCVD and electrochemical deposition. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 98-105. ISBN 978-9975-45-082-9. en_US
dc.identifier.isbn 978-9975-45-082-9
dc.identifier.uri http://repository.utm.md/handle/5014/7245
dc.description.abstract It was found that the morphology, electrical and luminescence properties of ZnO layers obtained by Magnetron sputtering, MOCVD and Electrochemical deposition can be controlled by technological parameters such as the ratio of argon-to-oxygen gases in the gas flow as well as the temperature of the substrate with the MOCVD and magnetron sputtering method, or by the composition and the temperature of solutions with the ECHD method. The low temperature PL spectra of nanorods grown by MOCVD is dominated by emission related to neutral donor bound excitons (D0X), while the emission from nanodots is dominated by a band related to donor-acceptor DA recombination. The origin of the DA PL band is discussed. The low temperature PL spectrum of ZnO bulk layers in the near-bandgap spectral range is dominated by a superposition of D0X related bands. The smooth films produced with a high Ar/O ratio during magnetron sputtering exhibit weak luminescence suggesting an amorphous nature of the film. Annealing of samples in air during 30 min at 450 oC after the deposition process leads to increasing luminescence intensity due to the crystallization. An n-ZnO/p-Si photodiode structure was produced by MOCVD, and its electrical characteristics were investigated in details. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject films en_US
dc.subject nanorods en_US
dc.subject nanodots en_US
dc.subject magnetron sputtering en_US
dc.subject electrochemical depositions en_US
dc.subject photoluminescence spectroscopy en_US
dc.subject spectroscopy en_US
dc.title Production and comparative study of ZnO films obtained by magnetron sputtering, MOCVD and electrochemical deposition en_US
dc.type Article en_US


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