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Генерация терагерцового излучения в процессе резонансного возбуждения экситонов в полупроводниках

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dc.contributor.author ХАДЖИ, П. И.
dc.contributor.author БЕЛОУСОВ, И. В.
dc.contributor.author КОРОВАЙ, А. В.
dc.contributor.author МАРКОВ, Д. А.
dc.contributor.author КОРОВАЙ, О. В.
dc.date.accessioned 2019-12-05T08:55:57Z
dc.date.available 2019-12-05T08:55:57Z
dc.date.issued 2012
dc.identifier.citation ХАДЖИ, П. И., БЕЛОУСОВ, И. В., КОРОВАЙ, А. В. et al. Генерация терагерцового излучения в процессе резонансного возбуждения экситонов в полупроводниках. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 139-144. ISBN 978-9975-45-082-9. en_US
dc.identifier.isbn 978-9975-45-082-9
dc.identifier.uri http://repository.utm.md/handle/5014/7269
dc.description.abstract A new mechanism of the generation (amplification) of terahertz radiation in semiconductors is proposed, which is based on the quantum transitions between two-exciton and biexciton under conditions of single-photon excitation from the ground state of a crystal. en_US
dc.language.iso ru en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject terahertz radiation en_US
dc.subject semiconductors en_US
dc.subject excitons en_US
dc.subject терагерцовое излучение en_US
dc.subject экситон en_US
dc.subject полупроводники en_US
dc.title Генерация терагерцового излучения в процессе резонансного возбуждения экситонов в полупроводниках en_US
dc.type Article en_US


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