Emergent multifunctional nanoelectronics based on oxide compounds and topological insulator materials

Abstract

With the recent development in material growth method including molecular beam epitaxy, pulsed laser deposition and metalorganic chemical vapor deposition, atomically engineered oxide and other materials like topological insulators become available, thus opening the door to the novel emergent nanoelectronics and nanospintronics. Some aspects of emergent multifunctional nanoelectronics based on oxide compounds and topological insulator materials are highlighted. The oxide multiferroics are characterized by an interesting new physics and they provide possibilities for applications in modern and future nanoelectronics. The underlying magnetic and electrical properties of a bulk system can change significantly when confined to a thin film and nanoheterostructures. Nanoscale lateral confinement of a quasi–two-dimensional electron realized at a lanthanum aluminate–strontium titanate interface is illustrated for transistor applications. Nanodevices operating as a hot-electron transistor (HET) and permeable-based transistor (PET) in the common-base in the heterostructure of (001)-oriented SrTiO3(STO)/La0:7Sr0:3MnO3 (LSMO)=Nb:STO, is analysed. The discovery of topological insulators has become one of the most exciting recent developments in condensed matter physics and they become the materials platform for a new emergent multifunctional nanoelectronics and nanospintronics. The surfaces of topological insulators enable the transport of spin-polarized electrons while preventing the "scattering" typically associated with power consumption. Because of such characteristics, these materials hold great potential for use in future transistors, memory devices and magnetic sensors that are highly energy efficient and require less power. The first step to field effect transistor is illustrated for Bi2Te3 nanoribbons. The device potential for topological insulator nanotubes are analyzed. New memory device concept based on the intrinsic topological insulator attribute- Berry curvature is revealed.