Porosification of narrow and wide band gap semiconductor compounds: comparative study of InAs, InP and ZnSe

Abstract

A comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V compound (InP) and a wide-bandgap II-VI semiconductor (ZnSe) is performed. It was found that the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. Difficulties in controlling the mechanism of pore growth in InAs were evidenced. Both current-line-oriented pores and crystallographically oriented pores can be produced in InP, while only current-lineoriented pores can be obtained in ZnSe.