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Особенности свойств гетеропереходов на структурных модификациях дифосфида цинка

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dc.contributor.author СТАМОВ, И. Г.
dc.date.accessioned 2019-12-06T10:53:29Z
dc.date.available 2019-12-06T10:53:29Z
dc.date.issued 2012
dc.identifier.citation СТАМОВ, И. Г. Особенности свойств гетеропереходов на структурных модификациях дифосфида цинка. In: Telecommunications, Electronics and Informatics - ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 303-308. ISBN 978-9975-45-082-9. en_US
dc.identifier.isbn 978-9975-45-082-9
dc.identifier.uri http://repository.utm.md/handle/5014/7329
dc.description.abstract The charge transfer and photoeffect in the heterojunction formed by the epytaxial growing of the one structure modification of the ZnP2 on the other are investigated. It was stated that the transitive processes on the interface of the region of space charge and the phase of heterojunction α (n) – β (p) – ZnP2 influence the definitive action on the spectral and temperature characteristics of the structure. It was shown that the composition of the domains of the space charge of the junction corresponds to the α and β phases of ZnP2, which form the heterojunction. On the interface of these phases the layer of low conductivity was observed which affects the heterojunction characteristics. en_US
dc.language.iso ru en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject photoeffects en_US
dc.subject heterojunctions en_US
dc.subject гетеропереходы en_US
dc.subject перенос заряда en_US
dc.subject фотоэффекты en_US
dc.title Особенности свойств гетеропереходов на структурных модификациях дифосфида цинка en_US
dc.type Article en_US


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