Sistem cu multe canale de reglare automată a procesului de creştere a structurilor semiconductoare prin HVPE

Abstract

The automatic control system for IEC-3/4R technological equipment of the gallium arsenide (GaAs) semiconductor structures epitaxial growing by HVPE method was elaborated. The aim of elaboration is increasing economic efficiency of the equipment and epitaxial structures quality for the high temperature ultraspeed semiconductor devices. The system was built on the universal two-channels programmable regulator TRM151 and interface converter AS4, fabricated by OVEN company. The elaboration consists in the IEC-3/4R laboratory technological equipment modernization into industrial technological equipment for microelectronic industry reanimation in Moldova.