Silicon nitride multi nanolayer system fabricated in one reactor

Abstract

The silicon nitride nanomultilayer structure (5 layers, thickness of each around 12 nm) was fabricated in one reactor. The structure had less oxygen concentration against the monolayer one having the same thickness. The oxygen and its originated centers were identified because of XPS, prethershold photoelectron emission spectroscopy and FTIR measurements. Oxygen connected electrically active centers decreased an electrical capacitance of the silicon nitride based capacitors.