Study of the Gallium Arsenide Layers Growing Process on the Own Oxide Surface by HVPE Method

Abstract

At the moment the global capacity of the solar energy installed in the electrical (grid) network exceed 100 GW while in 2000 it was 1,5 GW. But the efficiency of photovoltaic module remains at the silicon electro physical properties level, which makes the direct method of sun energy conversion competitive compared to traditional methods which are dangerous for the environment. The utilization of A3B5 semiconductor compounds manufacture increases over 40% of module photovoltaic efficiency, but it is not commercially competitive for terrestrial applications. Automation hydride vapor phase eptaxy (HVPE) technology of growing gallium arsenide (GaAs) epitaxial layers on own oxide substrate in Ga-AsCl3 –H2 gas system permits the exclusion of massive GaAs substrate and consequently the decrease of production costs of efficient photovoltaic cells. The investigated results of this technology are presented in the report and they are confirmed by experiments with obtained structures. It was used the AFM, RAMAN spectroscopy of investigation, electrical and optical measurements.