dc.contributor.author | PYSHKIN, S. | |
dc.date.accessioned | 2020-05-14T12:21:30Z | |
dc.date.available | 2020-05-14T12:21:30Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | PYSHKIN, S. Excitonic Crystal in Nanotechnology. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 73. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/8196 | |
dc.description | Abstract | en_US |
dc.description.abstract | This paper demonstrates the results of development of growth technology for perfect and free of contamination gallium phosphide (GaP) crystals and investigation of influence of crystallization conditions on quality and properties of the crystals. The long-term ordered and therefore close to ideal crystals repeat behavior of the best nanoparticles with pronounced quantum confinement effect. These perfect crystals are useful for application in top-quality optoelectronic devices as well as they are a new object for development of fundamentals of solid state physics. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | gallium phosphide crystals | en_US |
dc.subject | crystals | en_US |
dc.subject | nanoparticles | en_US |
dc.subject | optoelectronic devices | en_US |
dc.title | Excitonic Crystal in Nanotechnology | en_US |
dc.type | Article | en_US |
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