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Observation of Electron Spin Relaxation Time in PNPN Structured GaAs

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dc.contributor.author MOROZUMI, A.
dc.contributor.author ITO, T.
dc.contributor.author ICHIDA, M.
dc.contributor.author ANDO, H.
dc.date.accessioned 2020-05-14T13:01:05Z
dc.date.available 2020-05-14T13:01:05Z
dc.date.issued 2015
dc.identifier.citation MOROZUMI, A., ITO, T., ICHIDA, M. et al. Observation of Electron Spin Relaxation Time in PNPN Structured GaAs. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 74. en_US
dc.identifier.uri https://doi.org/10.1007/978-981-287-736-9_42
dc.identifier.uri http://repository.utm.md/handle/5014/8199
dc.description Access full text - https://doi.org/10.1007/978-981-287-736-9_42 en_US
dc.description.abstract To observe effect of electron-hole exchange interaction on electron spin relaxation time, we performed polarization- and time-resolved PL measurements by using pnpn structured GaAs. This structure is supposed spatial distance between excited electrons and holes are changed by excitation power density. Prolongation of spin relaxation time was observed when excitation power density was weak and distance between electron and hole was long. The change of spin relaxation time attributable to the reduction of electron-hole exchange interaction in pnpn structure. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject spin relaxation en_US
dc.subject electron-hole exchange interaction en_US
dc.subject PNPN en_US
dc.subject PL measurement en_US
dc.title Observation of Electron Spin Relaxation Time in PNPN Structured GaAs en_US
dc.type Article en_US


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