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Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment

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dc.contributor.author BAKERENKOV, A. S.
dc.contributor.author PERSHENKOV, V. S.
dc.contributor.author RODIN, A. S.
dc.contributor.author FELITSYN, V. A.
dc.contributor.author MIROSHNICHENKO, A. G.
dc.date.accessioned 2020-05-20T07:16:26Z
dc.date.available 2020-05-20T07:16:26Z
dc.date.issued 2015
dc.identifier.citation BAKERENKOV, A. S., PERSHENKOV, V. S., RODIN, A. S. et al. Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 125. en_US
dc.identifier.uri https://doi.org/10.1007/978-981-287-736-9_123
dc.identifier.uri http://repository.utm.md/handle/5014/8298
dc.description Access full text - https://doi.org/10.1007/978-981-287-736-9_123 en_US
dc.description.abstract The conversion model of low dose rate effect in bipolar devices was used for numerical simulation of total dose effects in bipolar devices for various radiation conditions of space environment. The numerical simulation was performed for cyclic temperature irradiation, which is typical for space applications, and for solar flare impact. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject measuring systems en_US
dc.subject voltage-current en_US
dc.subject nanoelectronic devices en_US
dc.subject semiconductors en_US
dc.subject integrated circuits en_US
dc.title Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment en_US
dc.type Article en_US


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