dc.contributor.author | BAKERENKOV, A. S. | |
dc.contributor.author | PERSHENKOV, V. S. | |
dc.contributor.author | RODIN, A. S. | |
dc.contributor.author | FELITSYN, V. A. | |
dc.contributor.author | MIROSHNICHENKO, A. G. | |
dc.date.accessioned | 2020-05-20T07:16:26Z | |
dc.date.available | 2020-05-20T07:16:26Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | BAKERENKOV, A. S., PERSHENKOV, V. S., RODIN, A. S. et al. Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 125. | en_US |
dc.identifier.uri | https://doi.org/10.1007/978-981-287-736-9_123 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8298 | |
dc.description | Access full text - https://doi.org/10.1007/978-981-287-736-9_123 | en_US |
dc.description.abstract | The conversion model of low dose rate effect in bipolar devices was used for numerical simulation of total dose effects in bipolar devices for various radiation conditions of space environment. The numerical simulation was performed for cyclic temperature irradiation, which is typical for space applications, and for solar flare impact. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | measuring systems | en_US |
dc.subject | voltage-current | en_US |
dc.subject | nanoelectronic devices | en_US |
dc.subject | semiconductors | en_US |
dc.subject | integrated circuits | en_US |
dc.title | Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment | en_US |
dc.type | Article | en_US |
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