Refractive Index in the Region of Excitonic Resonances in TlGaSe2 Crystals

TIRON, A. V.

DSpace Home
→
Facultatea Calculatoare, Informatică şi Microelectronică
→
Conferinţe
→
Conferinţa ICNBME - International Conference on Nanotechnologies and Biomedical Engineering
→
2019
→
View Item

dc.contributor.author	TIRON, A. V.
dc.date.accessioned	2020-05-22T10:04:28Z
dc.date.available	2020-05-22T10:04:28Z
dc.date.issued	2019
dc.identifier.citation	TIRON, A. V. Refractive Index in the Region of Excitonic Resonances in TlGaSe2 Crystals. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21 : Program & Abstract Book , 2019. Chişinău, 2019, p. 101. ISBN 978-9975-72-392-3.	en_US
dc.identifier.issn	978-9975-72-392-3
dc.identifier.uri	https://doi.org/10.1007/978-3-030-31866-6_16
dc.identifier.uri	http://repository.utm.md/handle/5014/8323
dc.description	Access full text - https://doi.org/10.1007/978-3-030-31866-6_16	en_US
dc.description.abstract	The low-temperature transmission and wavelength modulated transmission spectra of ТlGaSе2 crystals with a thickness of 7, 5.7, 4.7 μm were measured. Refractive index was calculated from interference observed in transmission spectra. The spectral dependences of the normal dispersion nа (Е║а) and nв (Е║в) and Δn = nа (Е║а) - nв (Е║в) on the long- wavelength and short-wave side of the ground states A, B and C of excitons are determined.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chalcogenides	en_US
dc.subject	optical spectroscopy	en_US
dc.subject	refractive index	en_US
dc.title	Refractive Index in the Region of Excitonic Resonances in TlGaSe2 Crystals	en_US
dc.type	Article	en_US