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Ionizing Radiation Dose Sensor Based on n-channel MOSFET

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dc.contributor.author PODLEPETSKY, B. I.
dc.contributor.author PERSHENKOV, V. S.
dc.contributor.author BELYAKOV, V. V.
dc.contributor.author BAKERENKOV, A. S.
dc.contributor.author FELITSYN, V.
dc.contributor.author RODIN, A. S.
dc.date.accessioned 2020-05-23T18:59:18Z
dc.date.available 2020-05-23T18:59:18Z
dc.date.issued 2019
dc.identifier.citation PODLEPETSKY, B. I., PERSHENKOV, V. S., BELYAKOV, V. V. Ionizing Radiation Dose Sensor Based on n-channel MOSFET. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21 : Program & Abstract Book , 2019. Chişinău, 2019, p. 128. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_73
dc.identifier.uri http://repository.utm.md/handle/5014/8366
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_73 en_US
dc.description.abstract We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-based dosimeter as function of the radiation doses at const values of the drain current ID and the drain – source voltage VD (conversion functions), as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures. It was shown how the conversion functions and the radiation sensitivities are depending on the temperature and electrical modes. It is found that the conversion functions V(D) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function and its components taking into account the separate contributions of charges in the dielectric and in SiO2–Si interface. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ionizing dose sensors en_US
dc.subject sensors en_US
dc.subject electrical modes en_US
dc.subject radiation sensitivity en_US
dc.title Ionizing Radiation Dose Sensor Based on n-channel MOSFET en_US
dc.type Article en_US


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