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New Areas of Research and Applications for GaN

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dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2020-05-25T09:53:35Z
dc.date.available 2020-05-25T09:53:35Z
dc.date.issued 2019
dc.identifier.citation TIGINYANU, Ion. New Areas of Research and Applications for GaN. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 59. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8375
dc.description Abstract en_US
dc.description.abstract Gallium nitride, a wide-bandgap semiconductor compound (Eg = 3.4 eV at 300 K), has in the last two decades registered a fascinating increase in the crystalline quality of epitaxial layers determining its leading role in the development of the modern solid-state lighting industry. Exhibiting an impressive number of unique properties such as high breakdown voltage, high switching frequencies, enhanced power efficiency, high electrical conductivity, excellent thermal stability and radiation hardness, over the last decade GaN has been remarkably successful in the area of high-power/high-frequency electronic applications and is now considered the second most important semiconductor material after Si. In this paper, we report on new fields of research and applications of gallium nitride. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium nitride en_US
dc.subject semiconductors en_US
dc.subject memristors en_US
dc.subject nanoparticles en_US
dc.subject nanoarchitectures en_US
dc.title New Areas of Research and Applications for GaN en_US
dc.type Article en_US


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