Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films

Abstract

Al-doped ZnO thin films have been prepared by spray pyrolysis, which facilitates the incorporation of a higher percentage of dopant atoms. The vacuum thermally annealed at 420 °C temperature thin films have been characterized by X-ray diffraction (XRD), optical spectroscopy. Electrical conductivity and the Hall effect are investigated in the temperature interval (77-300) K. X-ray analysis results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane.