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Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films

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dc.contributor.author POTLOG, T.
dc.contributor.author LUNGU, I.
dc.contributor.author RAEVSCHI, S.
dc.contributor.author BOTNARIUC, V.
dc.contributor.author ROBU, S.
dc.contributor.author WORASAWAT, S.
dc.contributor.author MIMURA, H.
dc.date.accessioned 2020-05-27T20:19:18Z
dc.date.available 2020-05-27T20:19:18Z
dc.date.issued 2019
dc.identifier.citation POTLOG, T., LUNGU, I., RAEVSCHI, S. et al. Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 78. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8423
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_18
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_18 en_US
dc.description.abstract Al-doped ZnO thin films have been prepared by spray pyrolysis, which facilitates the incorporation of a higher percentage of dopant atoms. The vacuum thermally annealed at 420 °C temperature thin films have been characterized by X-ray diffraction (XRD), optical spectroscopy. Electrical conductivity and the Hall effect are investigated in the temperature interval (77-300) K. X-ray analysis results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject spray pyrolysis en_US
dc.subject al-doped thin films en_US
dc.title Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films en_US
dc.type Article en_US


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