Abstract:
Spectral dependences of transmittance (T) and wavelength modulated transmittance (ΔT/Δλ) of As2S3 layers doped by manganese (Mn) of different concentrations (0–0.5%) were investigated at temperatures from 10 to 300 K. Photoluminescence bands at 1.762, 2.107 and 2.282 eV due to transition 4A2g(4F) ⟶ 4Eg(2G), 4T1g(4G) ⟶ 6A1g(4F) and 4T2g ⟶ 6A1g of Mn ions, respectively were observed at argon laser excitation. On the luminescence spectra the absorption bands of electron transitions 6A1g(4F) ⟶ 4T1g(4G) were recognized. The magnitude of refractive index (n) of Mn (0.1 and 0.5%) ions doped As2S3 layers in low-energy range (1.6–1.9 eV) does not change at temperature decreasing from 300 to 10 K. The spectral dependences of refractive indices of As2S3 samples doped with Mn ions of different concentrations (0.1 and 0.5%) did not have any features.