Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer

Abstract

In fabricating CdS/CdTe photovoltaic devices by close space sublimation method, thermal annealed in CdCI2 ambient at 400 °C at the interface is deposited an i-CdO layer by magnetron sputtering. Comparative analysis of electrical, photovoltaic parameters and photo-response spectral distribution is studied. The insertion of i-CdO at the interface of device increases both short circuit current (Isc) and open circuit voltage (Voc). In addition, the experimental results revealed that the insertion of i-nanolayer broaden the depletion region of the device and diminish the interface state density, thus improving efficiency of the device.