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Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer

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dc.contributor.author QASSEM, A. AL
dc.contributor.author GAGARA, L.
dc.contributor.author FEDOROV, V.
dc.contributor.author LUNGU, I.
dc.contributor.author POTLOG, T.
dc.date.accessioned 2020-05-30T19:45:57Z
dc.date.available 2020-05-30T19:45:57Z
dc.date.issued 2019
dc.identifier.citation QASSEM, A. AL, GAGARA, L., FEDOROV, V. et al. Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 91. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8494
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_125
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_125 en_US
dc.description.abstract In fabricating CdS/CdTe photovoltaic devices by close space sublimation method, thermal annealed in CdCI2 ambient at 400 °C at the interface is deposited an i-CdO layer by magnetron sputtering. Comparative analysis of electrical, photovoltaic parameters and photo-response spectral distribution is studied. The insertion of i-CdO at the interface of device increases both short circuit current (Isc) and open circuit voltage (Voc). In addition, the experimental results revealed that the insertion of i-nanolayer broaden the depletion region of the device and diminish the interface state density, thus improving efficiency of the device. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject photovoltaic devices en_US
dc.subject close space sublimation method en_US
dc.subject photovoltaic parameters en_US
dc.subject electrical parameters en_US
dc.title Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer en_US
dc.type Article en_US


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