GaN-based 2D and 3D Architectures for Electronic Applications

Abstract

In this paper we demonstrate the fabrication of electronic devices based on GaN nanostructures. For fabrication of 2D and 3D GaN nanostructures, Surface Charge Lithography (SCL) and Hydride Vapor Phase Epitaxy (HVPE) techniques were used. A memristor device based on GaN ultrathin membranes with the thickness of 15 nm obtained by SCL was elaborated. For GaN microtetrapods growth, the HVPE method was used, where ZnO microtetrapods were used as sacrificial template.