Mimicking Brain Activities: Artificial Synapses and Learning Using GaN Membranes

Abstract

We show experimentally that ultrathin GaN membranes, having the thickness of 15 nm and planar dimensions of 12 184 m2, are acting as memristive devices which are the anologue of brain sysnapses. The memristive behavior origins from the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes.