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Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte

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dc.contributor.author TIGINYANU, I. M.
dc.contributor.author URSAKI, V. V.
dc.contributor.author MONAICO, E.
dc.contributor.author FOCA, E.
dc.contributor.author FÖLL, H.
dc.date.accessioned 2020-09-02T07:34:04Z
dc.date.available 2020-09-02T07:34:04Z
dc.date.issued 2007
dc.identifier.citation TIGINYANU, I. M., URSAKI, V. V., MONAICO, E. et al. Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte. In: Electrochemical and Solid-State Letters. 2007, V. 10, Nr. 11, pp. D127. ISSN ‎‎1099-0062. en_US
dc.identifier.issn 1099-0062
dc.identifier.uri https://doi.org/10.1149/1.2771076
dc.identifier.uri http://repository.utm.md/handle/5014/9155
dc.description Access full text - https://doi.org/10.1149/1.2771076 en_US
dc.description.abstract We propose to use a neutral electrolyte based on an aqueous solution of instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of and substrates. It is shown that the process of material porosification can be controlled by the conditions of anodic etching. A photoluminescence analysis of the porous structures obtained and referenced to the as-grown substrate demonstrates that an effective passivation of the surface occurs during anodization in this electrolyte. The results obtained pave the way for the development of optoelectronic devices based on electrochemically nanostructured and compounds, particularly for high-efficiency solar cells. en_US
dc.language.iso en en_US
dc.publisher The Electrochemical Society en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject electrolytes en_US
dc.subject electrochemical nanostructuring en_US
dc.subject substrates en_US
dc.subject optoelectronic devices en_US
dc.title Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte en_US
dc.type Article en_US


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