Charge transport mechanisms in quaternary glassy S -Te based thin films

CIOBANU, M.; TSIULYANU, D.

dc.contributor.author	CIOBANU, M.
dc.contributor.author	TSIULYANU, D.
dc.date.accessioned	2020-09-08T07:27:16Z
dc.date.available	2020-09-08T07:27:16Z
dc.date.issued	2016
dc.identifier.citation	CIOBANU, M., TSIULYANU, D. Charge transport mechanisms in quaternary glassy S -Te based thin films. In: Materials Science and Condensed Matter Physics : proc. of the 8th intern. conf. Sept. 12-16 2016, Chişinău, 2016, p. 102. ISBN 978-9975-9787-1-2.	en_US
dc.identifier.isbn	978-9975-9787-1-2
dc.identifier.uri	http://repository.utm.md/handle/5014/9276
dc.description	Abstract	en_US
dc.description.abstract	Several compositions of quaternary materials in the As-S-Ge-Te system were synthesized by meltquenching technique and the respective thin films have been fabricated. Shown by AFM, SEM and X - ray analysis the nature of the films was predominantly amorphous. In order to elucidate the mechanisms of charge transport in these films, the DC and AC conductivities have been carried out in the 10 - 200 0C temperature range and 5 - 107 Hz respectively. Direct current - voltage characteristics were measured at different temperatures in normal air ambient conditions, using a priory established electrically transparent (ohmic) Ag contacts.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	charge transports	en_US
dc.subject	films	en_US
dc.title	Charge transport mechanisms in quaternary glassy S -Te based thin films	en_US
dc.type	Article	en_US