Control of HVPE grown GaN nanostruturing by anodization

MONAICO, Ed.; MOISE, C.; MIHAI, G.; ENACHESCU, M.; NIELSCH, K.; URSAKI, V. V.; TIGINYANU, I. M.

dc.contributor.author	MONAICO, Ed.
dc.contributor.author	MOISE, C.
dc.contributor.author	MIHAI, G.
dc.contributor.author	ENACHESCU, M.
dc.contributor.author	NIELSCH, K.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-09-08T09:16:55Z
dc.date.available	2020-09-08T09:16:55Z
dc.date.issued	2018
dc.identifier.citation	MONAICO, Ed., MOISE, C., MIHAI, G. et al. Control of HVPE grown GaN nanostruturing by anodization. In: Materials Science and Condensed Matter Physics : proc. of the 9th intern. conf. Sept. 25-28, 2018, Chişinău, 2018, p. 207.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/9288
dc.description	Sursa: Conferința – "International Conference on Materials Science and Condensed Matter Physics", 9-th Edition, Chişinău, Moldova, 25-28 septembrie 2018.→ https://ibn.idsi.md/collection_view/135	en_US
dc.description.abstract	In this paper, results of a systematic study of morphologies obtained with anodization in HNO3, HCl, and NaCl solutions are presented. It is shown that complex pyramidal structures composed by regions with modulated porosity parallel to the pyramid surface, with pores oriented perpendicular to the wafer surface, or with arrays of nanowires are produced near the N-wafer surface, depending on the applied anodization voltage and the used electrolyte. The thickness of the pore walls is controlled by the applied voltage. Porous matrices with the depth up to 50 µm have been demonstrated.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată, AŞM	en_US
dc.rights	Attribution-NonCommercial-ShareAlike 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.subject	electronics	en_US
dc.subject	semiconductors	en_US
dc.subject	nanowires	en_US
dc.title	Control of HVPE grown GaN nanostruturing by anodization	en_US
dc.type	Article	en_US