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Semiconductor-oxide nanocomposites based on porous semiconductors

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dc.contributor.author SIRBU, L.
dc.contributor.author URSAKI, V. V.
dc.contributor.author TIGINYANU, I. M.
dc.contributor.author DOLGALEVA, Ks.
dc.contributor.author BOYD, R. W.
dc.date.accessioned 2020-09-17T10:53:55Z
dc.date.available 2020-09-17T10:53:55Z
dc.date.issued 2007
dc.identifier.citation SIRBU, L., URSAKI, V. V., TIGINYANU, I. M., DOLGALEVA, Ks., BOYD, R. W. Semiconductor-oxide nanocomposites based on porous semiconductors. In: Moldavian Journal of the Physical Sciences. 2007, vol. 6 (2), pp. 142-147. ISSN 1810-648X. en_US
dc.identifier.issn 1810-648X
dc.identifier.uri http://repository.utm.md/handle/5014/9535
dc.description.abstract Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at temperatures from 500 to 900 oC. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on GaAs templates. 4f-4f intrashell transitions in Eu3+ and Er3+ ions assure strong red and green emission from these nanophases. en_US
dc.language.iso en en_US
dc.publisher Academy of Sciences of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject optoelectronic materials en_US
dc.subject electromagnetic radiation en_US
dc.subject random lasers en_US
dc.subject rare earth ions en_US
dc.title Semiconductor-oxide nanocomposites based on porous semiconductors en_US
dc.type Article en_US


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