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Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers

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dc.contributor.author POPA, V.
dc.date.accessioned 2020-09-17T12:55:58Z
dc.date.available 2020-09-17T12:55:58Z
dc.date.issued 2005
dc.identifier.citation POPA, V. Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers. In: Moldavian Journal of the Physical Sciences. 2005, vol. 4 (1), pp. 125-129. ISSN 1810-648X. en_US
dc.identifier.issn 1810-648X
dc.identifier.uri http://repository.utm.md/handle/5014/9553
dc.description.abstract Photoelectrochemical etching of GaN in different solutions such as KOH, HF/H2O2/C2H5OH and oxalic acid was performed. The results of scanning electron microscopy cathodoluminescence analysis of the etched samples are presented. en_US
dc.language.iso en en_US
dc.publisher Academy of Sciences of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject photoelectrochemical etching en_US
dc.subject chemical reaction en_US
dc.subject gallium oxide formation en_US
dc.subject morphology en_US
dc.title Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers en_US
dc.type Article en_US


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