dc.contributor.author | POPA, V. | |
dc.date.accessioned | 2020-09-17T12:55:58Z | |
dc.date.available | 2020-09-17T12:55:58Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | POPA, V. Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers. In: Moldavian Journal of the Physical Sciences. 2005, vol. 4 (1), pp. 125-129. ISSN 1810-648X. | en_US |
dc.identifier.issn | 1810-648X | |
dc.identifier.uri | http://repository.utm.md/handle/5014/9553 | |
dc.description.abstract | Photoelectrochemical etching of GaN in different solutions such as KOH, HF/H2O2/C2H5OH and oxalic acid was performed. The results of scanning electron microscopy cathodoluminescence analysis of the etched samples are presented. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Academy of Sciences of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | photoelectrochemical etching | en_US |
dc.subject | chemical reaction | en_US |
dc.subject | gallium oxide formation | en_US |
dc.subject | morphology | en_US |
dc.title | Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers | en_US |
dc.type | Article | en_US |
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