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Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content

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dc.contributor.author COLIBABA, G.V.
dc.contributor.author COSTRIUCOVA, N.
dc.contributor.author RUSNAC, D.
dc.contributor.author BUSUIOC, S.
dc.contributor.author MONAICO, E.V.
dc.date.accessioned 2021-11-15T11:28:14Z
dc.date.available 2021-11-15T11:28:14Z
dc.date.issued 2021
dc.identifier.citation COLIBABA, G.V., COSTRIUCOVA, N., RUSNAC, D., BUSUIOC, S., MONAICO, E.V. Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 114. ISBN 978-9975-72-592-7. en_US
dc.identifier.isbn 978-9975-72-592-7
dc.identifier.uri http://repository.utm.md/handle/5014/18052
dc.description Only Abstract. en_US
dc.description.abstract ZnO:Ga:Cl ceramics were sintered using chemical vapor transport technique. Ga content was varied in a range of 0 10 mol %. The wettability of unpolished and polished surface of ZnO:Ga:Cl ceramics was investigated. The polished and etched surface of ZnO ceramics is in a hydrophilic state. The presence of Ga impurity leads to a strong increase in the water contact angle to 131. This behavior is attributed to a high concentration of free electrons, which suppress the formation of intrinsic surface defects acting as traps for water molecules. Air pockets on unpolished surfaces of ZnO:Ga:Cl ceramics are an additional factor that increases the water contact angle. en_US
dc.language.iso en en_US
dc.publisher Universitatea Tehnică a Moldovei en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ZnO:Ga:Cl ceramics en_US
dc.subject Ga impurity en_US
dc.subject free electrons en_US
dc.title Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content en_US
dc.type Article en_US


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