dc.contributor.author | MONAICO, E. V. | |
dc.contributor.author | BUSUIOC, S. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.date.accessioned | 2022-02-04T08:03:21Z | |
dc.date.available | 2022-02-04T08:03:21Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | MONAICO, E. V., BUSUIOC, S., TIGINYANU, I. M. Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition. In: 5th International Conference on Nanotechnologies and Biomedical Engineering, ICNBME: proc. IFMBE, 3-5 Nov. 2021, Chișinău, Moldova, 2022, V. 87, pp. 62-69. ISBN 978-3-030-92328-0. | en_US |
dc.identifier.isbn | 978-3-030-92328-0 | |
dc.identifier.uri | https://doi.org/10.1007/978-3-030-92328-0_9 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/19156 | |
dc.description | Acces full text - https://doi.org/10.1007/978-3-030-92328-0_9 | en_US |
dc.description.abstract | In this paper we present a systematic study of bulk GaAs wafers and gold-decorated GaAs surfaces exhibiting hydrophilic and hydrophobic behaviors. The wetting properties can be switched to superhydrophilicity and superhydrophilicity by simple electrochemical etching providing engineered porous morphologies. The results open interesting technological perspectives for the exploitation of GaAs surfaces. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer, Cham | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | gallium arsenide surfaces | en_US |
dc.subject | bulk wafers | en_US |
dc.subject | wafers | en_US |
dc.subject | gold-decorated surfaces | en_US |
dc.subject | surfaces | en_US |
dc.subject | wetting | en_US |
dc.subject | electrochemical etching | en_US |
dc.subject | porous morphologies | en_US |
dc.title | Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition | en_US |
dc.type | Article | en_US |
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