The deposition process of ZnO films doped with Eu and functionalized with Pd

Abstract

The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=Igas/Iair =1.3 for 100 ppm H2 gas at room temperature and S= Igas/Iair =118 at operating temperature of 250 oC.