The influence of gallium (Ga) content on morphological, structural and optical properties of indium tin oxide thin films

MORARI, Vadim; KUTUZAU, Maksim

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dc.contributor.author	MORARI, Vadim
dc.contributor.author	KUTUZAU, Maksim
dc.date.accessioned	2022-08-09T07:55:07Z
dc.date.available	2022-08-09T07:55:07Z
dc.date.issued	2022
dc.identifier.citation	MORARI, Vadim, KUTUZAU, Maksim. The influence of gallium (Ga) content on morphological, structural and optical properties of indium tin oxide thin films. In: Conferinţa tehnico-ştiinţifică a studenţilor, masteranzilor şi doctoranzilor = Technical Scientific Conference of Undergraduate, Master and PhD Students, Universitatea Tehnică a Moldovei, 29-31 martie 2022. Chișinău, 2022, vol. 1, pp. 230-234. ISBN 978-9975-45-828-3. ISBN 978-9975-45-829-0 (Vol.1).	en_US
dc.identifier.isbn	978-9975-45-828-3
dc.identifier.isbn	978-9975-45-829-0
dc.identifier.uri	http://repository.utm.md/handle/5014/20655
dc.description.abstract	This paper reports on preparation of ITO thin films with different concentrations of Ga by spay pyrolysis method on Si (100) substrates. The morphology of the prepared films was studied using scanning electron microscope (SEM), and the quantitative chemical composition was determined using energy dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) measurements were carried out on Bruker D8 Advance X-Ray Diffractometer with CoKα radiation (λ=0.1789 nm) in the 2Θ region of 20° - 90°. The optical properties of ITO:Ga thin films were measured using a Jasco V-670 spectrometer at room temperature (300 K).	en_US
dc.language.iso	en	en_US
dc.publisher	Universitatea Tehnică a Moldovei	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	indium tin oxide	en_US
dc.subject	thin films	en_US
dc.title	The influence of gallium (Ga) content on morphological, structural and optical properties of indium tin oxide thin films	en_US
dc.type	Article	en_US