dc.contributor.author | VERJBIŢKI, Valeri | |
dc.contributor.author | LUPAN, Oleg | |
dc.contributor.author | RAILEAN, Serghei | |
dc.date.accessioned | 2023-12-04T12:23:54Z | |
dc.date.available | 2023-12-04T12:23:54Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | VERJBIŢKI, Valeri, LUPAN, Oleg, RAILEAN, Serghei. Device and method for measuring the resistance of a sensor based on nanostructured semiconductor oxides in the range of the order of microwatts. In: The 23th international exhibition of inventions INVENTICA 2019, Iasi, Romania, 2019, p. 294. ISSN:1844-7880. | en_US |
dc.identifier.issn | 1844-7880 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25154 | |
dc.description | Patent / patent application Nr. MD 1269 Y, 2018.07.31, BOPI nr. 7/2018. Domain: Gas detection systems. | en_US |
dc.description.abstract | Dispozitivul include o sursă de tensiune de referință reglabilă conectată la ieșirea unui microcontroler și unită în serie cu senzorul cercetat și un rezistor de referință, punctul de legătură al căruia cu senzorul cercetat este conectat la intrarea microcontrolerului. Metoda constă în măsurarea tensiunii sursei de tensiune de referință, măsurarea căderii de tensiune pe rezistorul de referință,calcularea căderii de tensiune pe senzor.Se calculeazăvaloarea curentului care trece prin nanostructură, puterea aplicată pe nanostructure și se setează valoarea tensiunii de referință astfel, încât puterea să nu depășească valoarea maxim admisibilă | en_US |
dc.description.abstract | The device comprises an adjustable reference voltage source connected to the output of a microcontroller and connected in series to the investigated nanostructured sensor and to the reference resistor,the connection point of which to the investigated sensor is connected to the input of the microcontroller. The method consists in: measuring the voltage of the reference voltage source, measuring the voltage drop across the reference resistor, calculating the voltage drop across the investigated nanostructure.Current flowing through the nanostructure and the applied power to the nanostructure are calculated and it is set the value of the reference voltage so that the electrical power will not exceed the maximum permitted value. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University "Gheorghe Asachi" of Iași | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | sursă de tensiune | en_US |
dc.subject | senzor | en_US |
dc.subject | rezistor | en_US |
dc.subject | adjustable reference voltage source | en_US |
dc.subject | microcontroller | en_US |
dc.subject | sensor | en_US |
dc.title | Device and method for measuring the resistance of a sensor based on nanostructured semiconductor oxides in the range of the order of microwatts | en_US |
dc.type | Article | en_US |
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